LED lighting technology of intelligent control of

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gan-based semiconductor materials in recent years is widely used to make short-wavelength optoelectronic devices, led sign such as light emitting diodes (leds) and laser diodes (lds). present reports on the growth of gan materials and documents are more of a small amount on the chip manufacturing report also is limited to a gan etching and ohmic contact, specific to the technical aspects of engineering design are few reports.
vf increased. pi according to various characteristics of the territory of the chip show that the following 20ma, neon sign various gan-based led chips are linear pi characteristics of the two mosaic map of the chip size and 350μm & time350μm diagonal layout diagonal electrode chip in less than 30ma the pi characteristics ofessentially the same, when the current is larger, the chip size of a large optical power is greater than the small size of the chip. another 350μm & time350μm p diagonal wire electrodeaway from the territory of the diagonal electrode chip n electrodes, in the normal operating current (<30ma) under high optical power, but the current power saturation faster.
well-known, led is a semiconductor product, if the led pin of the two pins or more components between the medium voltage exceeds the breakdown strength, it will cause damage to the device. the thinner oxide layer, the led message board ic and the greater the sensitivity of static, such as solder is not full, the quality of the solder itself, problems, etc., will have a serious leak paths, resulting in devastating damage. another failure was due to the node temperature exceeds the melting point of semiconductor silicon (1415 ℃) arising from. pulse energy can generate static electricity localized heating, resulting in the breakdown of the lamp and the ic directly to the fault.